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| savantic semiconductor product specification silicon pnp power transistors 2SB1400 d escription with to-220fa package high dc current gain low collector saturation voltage darlington applications for use in low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -120 v v ceo collector -emitter voltage open base -120 v v ebo emitter-base voltage open collector -7 v i c collector current -6 a i cm collector current-peak -10 a t a =25 2 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1400 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma; r be = = -120 v v (br)cbo collector-base breakdown voltage i c =-100a; i e =0 -120 v v (br)ebo emitter-base breakdown voltage i e =-50ma; i c =0 -7 v v cesat-1 collector-emitter saturation voltage i c =-3a ;i b =-6ma -1.5 v v cesat-2 collector-emitter saturation voltage i c =-6a ;i b =-60ma -3.0 v v besat-1 base-emitter saturation voltage i c =-3a ;i b =-6ma -2.0 v v besat-2 base-emitter saturation voltage i c =-6a ;i b =-60ma -3.5 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ceo collector cut-off current v ce =-100v; r be = = -10 a h fe dc current gain i c =-3a ; v ce =-3v 1000 20000 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1400 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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